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  tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 1 post office box 655303 ? dallas, texas 75265  trimmed offset voltage: tlc27m 7... 500 m v max at 25 c, v dd = 5 v  input offset voltage drif t...t ypically 0.1 m v/month, including the first 30 days  wide range of supply voltages over specified temperature ranges: 0 c to 70 c...3 v to 16 v 40 c to 85 c...4 v to 16 v 55 c to 125 c...4 v to 16 v  single-supply operation  common-mode input voltage range extends below the negative rail (c-suffix, i-suffix types)  low nois e...t ypically 32 nv/ hz at f = 1 khz  low powe r...t ypically 2.1 mw at 25 c, v dd = 5 v  output voltage range includes negative rail  high input impedanc e...10 12 w typ  esd-protection circuitry  small-outline package option also available in tape and reel  designed-in latch-up immunity 1 2 3 4 8 7 6 5 1out 1in 1in + gnd v cc 2out 2in 2in + d, jg, p or pw package (top view) 3 2 1 20 19 910111213 4 5 6 7 8 18 17 16 15 14 nc 2out nc 2in nc nc 1in nc 1in + nc fk package (top view) nc 1out nc nc nc nc gnd nc nc no internal connection dd v 2in + 800 percentage of units % v io input offset voltage m v 30 800 0 400 0 400 5 10 15 20 25 t a = 25 c p package distribution of tlc27m7 input offset voltage ??????????? 340 units tested from 2 wafer lots v dd = 5 v available options v io max package t a v io max at 25 c small outline (d) chip carrier (fk) ceramic dip (jg) plastic dip (p) tssop (pw) 500 m v tlc27m7cd e e tlc27m7cp e 0 cto70 5 c 2 mv tlc27m2bcd e e tlc27m2bcp e 0 c to 70 c 5 mv tlc27m2acd e e tlc27m2acp e 10 mv tlc27m2cd e e tlc27m2cp tlc27m2cpw 500 m v tlc27m7id e e tlc27m7ip e 40 cto85 5 c 2 mv tlc27m2bid e e tlc27m2bip e 40 c to 85 c 5 mv TLC27M2AID e e tlc27m2aip e 10 mv tlc27m2id e e tlc27m2ip tlc27m2ipw 55 cto125 5 c 500 m v tlc27m7md tlc27m7mfk tlc27m7mjg tlc27m7mp e 55 c to 125 c 10 mv tlc27m2md tlc27m2mfk tlc27m2mjg tlc27m2mp e the d and pw package is available taped and reeled. add r suffix to the device type (e.g.,tlc27m7cdr). copyright ? 1999, texas instruments incorporated production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters. lincmos is a trademark of texas instruments incorporated.
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 2 post office box 655303 ? dallas, texas 75265 description the tlc27m2 and tlc27m7 dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds approaching that of general-purpose bipolar devices.these devices use texas instruments silicon-gate lincmos technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes. the extremely high input impedance, low bias currents, and high slew rates make these cost-effective devices ideal for applications which have previously been reserved for general-purpose bipolar products,but with only a fraction of the power consumption. four offset voltage grades are available (c-suffix and i-suffix types), ranging from the low-cost tlc27m2 (10 mv) to the high-precision tlc27m7 (500 m v). these advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs. in general, many features associated with bipolar technology are available on lincmos ? operational amplifiers, without the power penalties of bipolar technology. general applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the tlc27m2 and tlc27m7. the devices also exhibit low voltage single-supply operation, making them ideally suited for remote and inaccessible battery-powered applications. the common-mode input voltage range includes the negative rail. a wide range of packaging options is available, including small-outline and chip-carrier versions for high-density system applications. the device inputs and outputs are designed to withstand 100-ma surge currents without sustaining latch-up. the tlc27m2 and tlc27m7 incorporate internal esd-protection circuits that prevent functional failures at voltages up to 2000 v as tested under mil-std-883c, method 3015.2; however, care should be exercised in handling these devices as exposure to esd may result in the degradation of the device parametric performance. the c-suffix devices are characterized for operation from 0 c to 70 c. the i-suffix devices are characterized for operation from 40 c to 85 c. the m-suffix devices are characterized for operation over the full military temperature range of 55 c to 125 c.
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 3 post office box 655303 ? dallas, texas 75265 equivalent schematic (each amplifier) v dd p4 p3 r6 n5 r2 p2 r1 p1 in in + n1 r3 d1 r4 d2 n2 gnd n3 r5 c1 n4 r7 n6 n7 out p6 p5
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 4 post office box 655303 ? dallas, texas 75265 absolute maximum ratings over operating free-air temperature range (unless otherwise noted) 2 supply voltage, v dd (see note 1) 18 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . differential input voltage, v id (see note 2) v dd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . input voltage range, v i (any input) 0.3 v to v dd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . input current, i i 5 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . output current, i o (each output) 30 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . total current into v dd 45 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . total current out of gnd 45 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . duration of short-circuit current at (or below) 25 c (see note 3) unlimited . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . continuous total dissipation see dissipation rating table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating free-air temperature, t a : c suffix 0 c to 70 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i suffix 40 c to 85 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . m suffix 55 c to 125 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature range 65 c to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . case temperature for 60 seconds: fk package 260 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: d or p package 260 c . . . . . . . . . . . . . . . . . lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: jg package 300 c . . . . . . . . . . . . . . . . . . . . 2 stresses beyond those listed under aabsolute maximum ratingso may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated under arecommended operating conditi onso is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. notes: 1. all voltage values, except differential voltages, are with respect to network ground. 2. differential voltages are at in+ with respect to in . 3. the output may be shorted to either supply. temperature and/or supply voltages must be limited to ensure that the maximum dissipation rating is not exceeded (see application section). dissipation rating table package t a 25 c power rating derating factor above t a = 25 c t a = 70 c power rating t a = 85 c power rating t a = 125 c power rating d 725 mw 5.8 mw/ c 464 mw 377 mw fk 1375 mw 11.0 mw/ c 880 mw 715 mw 275 mw jg 1050 mw 8.4 mw/ c 672 mw 546 mw 210 mw p 1000 mw 8.0 mw/ c 640 mw 520 mw recommended operating conditions c suffix i suffix m suffix unit min max min max min max unit supply voltage, v dd 3 16 4 16 4 16 v common mode in p ut voltage v ic v dd = 5 v 0.2 3.5 0.2 3.5 0 3.5 v common - mode inp u t v oltage , v ic v dd = 10 v 0.2 8.5 0.2 8.5 0 8.5 v operating free-air temperature, t a 0 70 40 85 55 125 c
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 5 post office box 655303 ? dallas, texas 75265 electrical characteristics at specified free-air temperature, v dd = 5 v (unless otherwise noted) parameter test conditions t a 2 tlc27m2c tlc27m2ac tlc27m2bc tlc27m7c unit min typ max tlc27m2c v o = 1.4 v, v ic = 0, 25 c 1.1 10 tlc27m2c o , r s = 50 w , ic , r i = 100 k w full range 12 mv tlc27m2ac v o = 1.4 v, v ic = 0, 25 c 0.9 5 mv v io in p ut offset voltage tlc27m2ac o , r s = 50 w , ic , r i = 100 k w full range 6.5 v io inp u t offset v oltage tlc27m2bc v o = 1.4 v, v ic = 0, 25 c 220 2000 tlc27m2bc o , r s = 50 w , ic , r i = 100 k w full range 3000 m v tlc27m7c v o = 1.4 v, v ic = 0, 25 c 185 500 m v tlc27m7c o , r s = 50 w , ic , r i = 100 k w full range 1500 a vio average temperature coefficient of input offset voltage 25 c to 70 c 1.7 m v/ c i io in p ut offset current (see note 4) v o =25v v ic =25v 25 c 0.1 p a i io inp u t offset c u rrent (see note 4) v o = 2 . 5 v , v ic = 2 . 5 v 70 c 7 300 pa i ib in p ut bias current (see note 4) v o =25v v ic =25v 25 c 0.6 p a i ib inp u t bias c u rrent (see note 4) v o = 2 . 5 v , v ic = 2 . 5 v 70 c 40 600 pa v icr common-mode input voltage range 25 c 0.2 to 4 0.3 to 4.2 v v icr gg (see note 5) full range 0.2 to 3.5 v 25 c 3.2 3.9 v oh high-level output voltage v id = 100 mv, r l = 100 k w 0 c 3 3.9 v 70 c 3 4 25 c 0 50 v ol low-level output voltage v id = 100 mv, i ol = 0 0 c 0 50 mv 70 c 0 50 l i l diff ti l lt 25 c 25 170 a vd large-signal differential voltage am p lification v o = 0.25 v to 2 v, r l = 100 k w 0 c 15 200 v/mv am lification 70 c 15 140 25 c 65 91 cmrr common-mode rejection ratio v ic = v icr min 0 c 60 91 db 70 c 60 92 s l lt j ti ti 25 c 70 93 k svr supply-voltage rejection ratio ( d v dd / d v io ) v dd = 5 v to 10 v, v o = 1.4 v 0 c 60 92 db ( d v dd / d v io ) 70 c 60 94 v25v v25v 25 c 210 560 i dd supply current (two amplifiers) v o = 2 . 5 v , no load v ic = 2 . 5 v , 0 c 250 640 m a no load 70 c 170 440 2 full range is 0 c to 70 c. notes: 4. the typical values of input bias current and input offset current below 5 pa were determined mathematically. 5. this range also applies to each input individually.
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 6 post office box 655303 ? dallas, texas 75265 electrical characteristics at specified free-air temperature, v dd = 10 v (unless otherwise noted) parameter test conditions t a 2 tlc27m2c tlc27m2ac tlc27m2bc tlc27m7c unit min typ max tlc27m2c v o = 1.4 v, v ic = 0, 25 c 1.1 10 tlc27m2c o , r s = 50 w , ic , r l = 100 k w full range 12 mv tlc27m2ac v o = 1.4 v, v ic = 0, 25 c 0.9 5 mv v io in p ut offset voltage tlc27m2ac o , r s = 50 w , ic , r l = 100 k w full range 6.5 v io inp u t offset v oltage tlc27m2bc v o = 1.4 v, v ic = 0, 25 c 224 2000 tlc27m2bc o , r s = 50 w , ic , r l = 100 k w full range 3000 m v tlc27m7c v o = 1.4 v, v ic = 0, 25 c 190 800 m v tlc27m7c o , r s = 50 w , ic , r l = 100 k w full range 1900 a vio average temperature coefficient of input offset voltage 25 c to 70 c 2.1 m v/ c i io in p ut offset current (see note 4) v o =5v v ic =5v 25 c 0.1 p a i io inp u t offset c u rrent (see note 4) v o = 5 v , v ic = 5 v 70 c 7 300 pa i ib in p ut bias current (see note 4) v o =5v v ic =5v 25 c 0.7 p a i ib inp u t bias c u rrent (see note 4) v o = 5 v , v ic = 5 v 70 c 50 600 pa v icr common-mode input voltage range 25 c 0.2 to 9 0.3 to 9.2 v v icr gg (see note 5) full range 0.2 to 8.5 v 25 c 8 8.7 v oh high-level output voltage v id = 100 mv, r l = 100 k w 0 c 7.8 8.7 v 70 c 7.8 8.7 25 c 0 50 v ol low-level output voltage v id = 100 mv, i ol = 0 0 c 0 50 mv 70 c 0 50 l i l diff ti l lt 25 c 25 275 a vd large-signal differential voltage am p lification v o = 1 v to 6 v, r l = 100 k w 0 c 15 320 v/mv am lification 70 c 15 230 25 c 65 94 cmrr common-mode rejection ratio v ic = v icr min 0 c 60 94 db 70 c 60 94 s l lt j ti ti 25 c 70 93 k svr supply-voltage rejection ratio ( d v dd / d v io ) v dd = 5 v to 10 v, v o = 1.4 v 0 c 60 92 db ( d v dd / d v io ) 70 c 60 94 v5v v5v 25 c 285 600 i dd supply current (two amplifiers) v o = 5 v , no load v ic = 5 v , 0 c 345 800 m a no load 70 c 220 560 2 full range is 0 c to 70 c. notes: 4. the typical values of input bias current and input offset current below 5 pa were determined mathematically. 5. this range also applies to each input individually.
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 7 post office box 655303 ? dallas, texas 75265 electrical characteristics at specified free-air temperature, v dd = 5 v (unless otherwise noted) parameter test conditions t a 2 tlc27m2i tlc27m2ai tlc27m2bi tlc27m7i unit min typ max tlc27m2i v o = 1.4 v, v ic = 0, 25 c 1.1 10 tlc27m2i o , r s = 50 w , ic , r l = 100 k w full range 13 mv tlc27m2ai v o = 1.4 v, v ic = 0, 25 c 0.9 5 mv v io in p ut offset voltage tlc27m2ai o , r s = 50 w , ic , r l = 100 k w full range 7 v io inp u t offset v oltage tlc27m2bi v o = 1.4 v, v ic = 0, 25 c 220 2000 tlc27m2bi o , r s = 50 w , ic , r l = 100 k w full range 3500 m v tlc27m7i v o = 1.4 v, v ic = 0, 25 c 185 500 m v tlc27m7i o , r s = 50 w , ic , r l = 100 k w full range 2000 a vio average temperature coefficient of input offset voltage 25 c to 85 c 1.7 m v/ c i io in p ut offset current (see note 4) v o =25v v ic =25v 25 c 0.1 p a i io inp u t offset c u rrent (see note 4) v o = 2 . 5 v , v ic = 2 . 5 v 85 c 24 1000 pa i ib in p ut bias current (see note 4) v o =25v v ic =25v 25 c 0.6 p a i ib inp u t bias c u rrent (see note 4) v o = 2 . 5 v , v ic = 2 . 5 v 85 c 200 2000 pa v icr common-mode input voltage range 25 c 0.2 to 4 0.3 to 4.2 v v icr gg (see note 5) full range 0.2 to 3.5 v 25 c 3.2 3.9 v oh high-level output voltage v id = 100 mv, r l = 100 k w 40 c 3 3.9 v 85 c 3 4 25 c 0 50 v ol low-level output voltage v id = 100 mv, i ol = 0 40 c 0 50 mv 85 c 0 50 l i l diff ti l lt 25 c 25 170 a vd large-signal differential voltage am p lification v o = 0.25 v to 2 v, r l = 100 k w 40 c 15 270 v/mv am lification 85 c 15 130 25 c 65 91 cmrr common-mode rejection ratio v ic = v icr min 40 c 60 90 db 85 c 60 90 s l lt j ti ti 25 c 70 93 k svr supply-voltage rejection ratio ( d v dd / d v io ) v dd = 5 v to 10 v, v o = 1.4 v 40 c 60 91 db ( d v dd / d v io ) 85 c 60 94 v25v v25v 25 c 210 560 i dd supply current (two amplifiers) v o = 2 . 5 v , no load v ic = 2 . 5 v , 40 c 315 800 m a no load 85 c 160 400 2 full range is 40 c to 85 c. notes: 4. the typical values of input bias current and input offset current below 5 pa were determined mathematically. 5. this range also applies to each input individually.
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 8 post office box 655303 ? dallas, texas 75265 electrical characteristics at specified free-air temperature, v dd = 10 v (unless otherwise noted) parameter test conditions t a 2 tlc27m2i tlc27m2ai tlc27m2bi tlc27m7i unit min typ max tlc27m2i v o = 1.4 v, v ic = 0, 25 c 1.1 10 tlc27m2i o , r s = 50 w , ic , r l = 100 k w full range 13 mv tlc27m2ai v o = 1.4 v, v ic = 0, 25 c 0.9 5 mv v io in p ut offset voltage tlc27m2ai o , r s = 50 w , ic , r l = 100 k w full range 7 v io inp u t offset v oltage tlc27m2bi v o = 1.4 v, v ic = 0, 25 c 224 2000 tlc27m2bi o , r s = 50 w , ic , r l = 100 k w full range 3500 m v tlc27m7i v o = 1.4 v, v ic = 0, 25 c 190 800 m v tlc27m7i o , r s = 50 w , ic , r l = 100 k w full range 2900 a vio average temperature coefficient of input offset voltage 25 c to 85 c 2.1 m v/ c i io in p ut offset current (see note 4) v o =5v v ic =5v 25 c 0.1 p a i io inp u t offset c u rrent (see note 4) v o = 5 v , v ic = 5 v 85 c 26 1000 pa 25 c 0.7 i ib input bias current (see note 4) v o = 5 v, v ic = 5 v 85 c 220 200 0 pa v icr common-mode input voltage range 25 c 0.2 to 9 0.3 to 9.2 v v icr gg (see note 5) full range 0.2 to 8.5 v 25 c 8 8.7 v oh high-level output voltage v id = 100 mv, r l = 100 k w 40 c 7.8 8.7 v 85 c 7.8 8.7 25 c 0 50 v ol low-level output voltage v id = 100 mv, i ol = 0 40 c 0 50 mv 85 c 0 50 l i l diff ti l lt 25 c 25 275 a vd large-signal differential voltage am p lification v o = 1 v to 6 v, r l = 100 k w 40 c 15 390 v/mv am lification 85 c 15 220 25 c 65 94 cmrr common-mode rejection ratio v ic = v icr min 40 c 60 93 db 85 c 60 94 s l lt j ti ti 25 c 70 93 k svr supply-voltage rejection ratio ( d v dd / d v io ) v dd = 5 v to 10 v, v o = 1.4 v 40 c 60 91 db ( d v dd / d v io ) 85 c 60 94 v5v v5v 25 c 285 600 i dd supply current v o = 5 v , no load v ic = 5 v , 40 c 450 900 m a no load 85 c 205 520 2 full range is 40 c to 85 c. notes: 4. the typical values of input bias current and input offset current below 5 pa were determined mathematically. 5. this range also applies to each input individually.
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 9 post office box 655303 ? dallas, texas 75265 electrical characteristics at specified free-air temperature, v dd = 5 v (unless otherwise noted) parameter test conditions t a 2 tlc27m2m tlc27m7m unit a min typ max tlc27m2m v o = 1.4 v, v ic = 0, 25 c 1.1 10 v io in p ut offset voltage tlc27m2m o , r s = 50 w , ic , r l = 100 k w full range 12 mv v io inp u t offset v oltage tlc27m7m v o = 1.4 v, v ic = 0, 25 c 185 500 mv tlc27m7m o , r s = 50 w , ic , r l = 100 k w full range 3750 a vio average temperature coefficient of input offset voltage 25 c to 125 c 1.7 m v/ c i io in p ut offset current (see note 4) v o =25v v ic =25v 25 c 0.1 pa i io inp u t offset c u rrent (see note 4) v o = 2 . 5 v , v ic = 2 . 5 v 125 c 1.4 15 na i ib in p ut bias current (see note 4) v o =25v v ic =25v 25 c 0.6 pa i ib inp u t bias c u rrent (see note 4) v o = 2 . 5 v , v ic = 2 . 5 v 125 c 9 35 na v icr common-mode input voltage range 25 c 0 to 4 0.3 to 4.2 v v icr gg (see note 5) full range 0 to 3.5 v 25 c 3.2 3.9 v oh high-level output voltage v id = 100 mv, r l = 100 k w 55 c 3 3.9 v 125 c 3 4 25 c 0 50 v ol low-level output voltage v id = 100 mv, i ol = 0 55 c 0 50 mv 125 c 0 50 l i l diff ti l lt 25 c 25 170 a vd large-signal differential voltage am p lification v o = 0.25 v to 2 v, r l = 100 k w 55 c 15 290 v/mv am lification 125 c 15 120 25 c 65 91 cmrr common-mode rejection ratio v ic = v icr min 55 c 60 89 db 125 c 60 91 s l lt j ti ti 25 c 70 93 k svr supply-voltage rejection ratio ( d v dd / d v io ) v dd = 5 v to 10 v, v o = 1.4 v 55 c 60 91 db ( d v dd / d v io ) 125 c 60 94 v25v v25v 25 c 210 560 i dd supply current (two amplifiers) v o = 2 . 5 v , no load v ic = 2 . 5 v , 55 c 340 880 m a no load 125 c 140 360 2 full range is 55 c to 125 c. notes: 4. the typical values of input bias current and input offset current below 5 pa were determined mathematically. 5. this range also applies to each input individually.
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 10 post office box 655303 ? dallas, texas 75265 electrical characteristics at specified free-air temperature, v dd = 10 v (unless otherwise noted) parameter test conditions t a 2 tlc27m2m tlc27m7m unit a min typ max tlc27m2m v o = 1.4 v, v ic = 0, 25 c 1.1 10 v io in p ut offset voltage tlc27m2m o , r s = 50 w , ic , r l = 100 k w full range 12 mv v io inp u t offset v oltage tlc27m7m v o = 1.4 v, v ic = 0, 25 c 190 800 mv tlc27m7m o , r s = 50 w , ic , r l = 100 k w full range 4300 a vio average temperature coefficient of input offset voltage 25 c to 125 c 2.1 m v/ c i io in p ut offset current (see note 4) v o =5v v ic =5v 25 c 0.1 p a i io inp u t offset c u rrent (see note 4) v o = 5 v , v ic = 5 v 125 c 1.8 15 pa i ib in p ut bias current (see note 4) v o =5v v ic =5v 25 c 0.7 p a i ib inp u t bias c u rrent (see note 4) v o = 5 v , v ic = 5 v 125 c 10 35 pa v icr common-mode input voltage range 25 c 0 to 9 0.3 to 9.2 v v icr gg (see note 5) full range 0 to 8.5 v 25 c 8 8.7 v oh high-level output voltage v id = 100 mv, r l = 100 k w 55 c 7.8 8.6 v 125 c 7.8 8.8 25 c 0 50 v ol low-level output voltage v id = 100 mv, i ol = 0 55 c 0 50 mv 125 c 0 50 l i l diff ti l lt 25 c 25 275 a vd large-signal differential voltage am p lification v o = 1 v to 6 v, r l = 100 k w 55 c 15 420 v/mv am lification 125 c 15 190 25 c 65 94 cmrr common-mode rejection ratio v ic = v icr min 55 c 60 93 db 125 c 60 93 s l lt j ti ti 25 c 70 93 k svr supply-voltage rejection ratio ( d v dd / d v io ) v dd = 5 v to 10 v, v o = 1.4 v 55 c 60 91 db ( d v dd / d v io ) 125 c 60 94 v5v v5v 25 c 285 600 i dd supply current (two amplifiers) v o = 5 v , no load v ic = 5 v , 55 c 490 1000 m a no load 125 c 180 480 2 full range is 55 c to 125 c. notes: 4. the typical values of input bias current and input offset current below 5 pa were determined mathematically. 5. this range also applies to each input individually.
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 11 post office box 655303 ? dallas, texas 75265 operating characteristics at specified free-air temperature, v dd = 5 v parameter test conditions t a tlc27m2c tlc27m2ac tlc27m2bc tlc27m7c unit min typ max 25 c 0.43 v i(pp) = 1 v 0 c 0.46 sr slew rate at unity gain r l = 100 k w , c l 20 p f () 70 c 0.36 v/ m s sr sle w rate at u nit y gain c l = 20 p f , see fi gu r e 1 25 c 0.40 v/ m s see figure 1 v i(pp) = 2.5 v 0 c 0.43 () 70 c 0.34 v n equivalent input noise voltage f = 1 khz, see figure 2 r s = 20 w , 25 c 32 nv/ hz vv c20f 25 c 55 b om maximum output-swing bandwidth v o = v oh , r l = 100 k w c l = 20 pf, see figure 1 0 c 60 khz r l = 100 k w , see figure 1 70 c 50 v10v c20f 25 c 525 b 1 unity-gain bandwidth v i = 10 mv, see figure 3 c l = 20 pf, 0 c 600 khz see figure 3 70 c 400 v10mv fb 25 c 40 f m phase margin v i = 10 m v , c l = 20 p f, f = b 1 , see figure 3 0 c 41 c l = 20 f , see figure 3 70 c 39 operating characteristics at specified free-air temperature, v dd = 10 v parameter test conditions t a tlc27m2c tlc27m2ac tlc27m2bc tlc27m7c unit min typ max 25 c 0.62 v i(pp) = 1 v 0 c 0.67 sr slew rate at unity gain r l = 100 k w , c l 20 p f () 70 c 0.51 v/ m s sr sle w rate at u nit y gain c l = 20 p f , see fi gu r e 1 25 c 0.56 v/ m s see figure 1 v i(pp) = 5.5 v 0 c 0.61 () 70 c 0.46 v n equivalent input noise voltage f = 1 khz, see figure 2 r s = 20 w , 25 c 32 nv/ hz vv c20f 25 c 35 b om maximum output-swing bandwidth v o = v oh , r l = 100 k w c l = 20 pf, see figure 1 0 c 40 khz r l = 100 k w , see figure 1 70 c 30 v10v c20f 25 c 635 b 1 unity-gain bandwidth v i = 10 mv, see figure 3 c l = 20 pf, 0 c 710 khz see figure 3 70 c 510 v10mv fb 25 c 43 f m phase margin v i = 10 m v , c l = 20 p f, f = b 1 , see figure 3 0 c 44 c l = 20 f , see figure 3 70 c 42
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 12 post office box 655303 ? dallas, texas 75265 operating characteristics at specified free-air temperature, v dd = 5 v parameter test conditions t a tlc27m2i tlc27m2ai tlc27m2bi tlc27m7i unit min typ max 25 c 0.43 v i(pp) = 1 v 40 c 0.51 sr slew rate at unity gain r l = 100 k w , c l 20 p f () 85 c 0.35 v/ m s sr sle w rate at u nit y gain c l = 20 p f , see fi gu r e 1 25 c 0.40 v/ m s see figure 1 v i(pp) = 2.5 v 40 c 0.48 () 85 c 0.32 v n equivalent input noise voltage f = 1 khz, see figure 2 r s = 20 w , 25 c 32 nv/ hz vv c20f 25 c 55 b om maximum output-swing bandwidth v o = v oh , r l = 100 k w c l = 20 pf, see figure 1 40 c 75 khz r l = 100 k w , see figure 1 85 c 45 v10v c20f 25 c 525 b 1 unity-gain bandwidth v i = 10 mv, see figure 3 c l = 20 pf, 40 c 770 mhz see figure 3 85 c 370 v10mv fb 25 c 40 f m phase margin v i = 10 m v , c l = 20 p f, f = b 1 , see figure 3 40 c 43 c l = 20 f , see figure 3 85 c 38 operating characteristics at specified free-air temperature, v dd = 10 v parameter test conditions t a tlc27m2i tlc27m2ai tlc27m2bi tlc27m7i unit min typ max 25 c 0.62 v i(pp) = 1 v 40 c 0.77 sr slew rate at unity gain r l = 100 k w , c l 20 p f () 85 c 0.47 v/ m s sr sle w rate at u nit y gain c l = 20 p f , see fi gu r e 1 25 c 0.56 v/ m s see figure 1 v i(pp) = 5.5 v 40 c 0.70 () 85 c 0.44 v n equivalent input noise voltage f = 1 khz, see figure 2 r s = 20 w , 25 c 32 nv/ hz vv c20f 25 c 35 b om maximum output-swing bandwidth v o = v oh , r l = 100 k w c l = 20 pf, see figure 1 40 c 45 khz r l = 100 k w , see figure 1 85 c 25 v10v c20f 25 c 635 b 1 unity-gain bandwidth v i = 10 mv, see figure 3 c l = 20 pf, 40 c 880 mhz see figure 3 85 c 480 v10mv fb 25 c 43 f m phase margin v i = 10 m v , c l = 20 p f, f = b 1 , see figure 3 40 c 46 c l = 20 f , see figure 3 85 c 41
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 13 post office box 655303 ? dallas, texas 75265 operating characteristics at specified free-air temperature, v dd = 5 v parameter test conditions t a tlc27m2m tlc27m7m unit a min typ max 25 c 0.43 v i(pp) = 1 v 55 c 0.54 sr slew rate at unity gain r l = 100 k w , c l 20 p f () 125 c 0.29 v/ m s sr sle w rate at u nit y gain c l = 20 p f , see fi gu r e 1 25 c 0.40 v/ m s see figure 1 v i(pp) = 2.5 v 55 c 0.49 () 125 c 0.28 v n equivalent input noise voltage f = 1 khz, see figure 2 r s = 20 w , 25 c 32 nv/ hz vv c20f 25 c 55 b om maximum output-swing bandwidth v o = v oh , r l = 100 k w c l = 20 pf, see figure 1 55 c 80 khz r l = 100 k w , see figure 1 125 c 40 v10v c20f 25 c 525 b 1 unity-gain bandwidth v i = 10 mv, see figure 3 c l = 20 pf, 55 c 850 khz see figure 3 125 c 330 v10mv fb 25 c 40 f m phase margin v i = 10 m v , c l = 20 p f, f = b 1 , see figure 3 55 c 44 c l = 20 f , see figure 3 125 c 36 operating characteristics at specified free-air temperature, v dd = 10 v parameter test conditions t a tlc27m2m tlc27m7m unit a min typ max 25 c 0.62 v i(pp) = 1 v 55 c 0.81 sr slew rate at unity gain r l = 100 k w , c l =20 p f () 125 c 0.38 v/ m s sr sle w rate at u nit y gain c l = 20 pf , see fi g ure 1 25 c 0.56 v/ m s see figure 1 v i(pp) = 5.5 v 55 c 0.73 () 125 c 0.35 v n equivalent input noise voltage f = 1 khz, see figure 2 r s = 20 w , 25 c 32 nv/ hz vv c20f 25 c 35 b om maximum output-swing bandwidth v o = v oh , r l = 100 k w c l = 20 pf, see figure 1 55 c 50 khz r l = 100 k w , see figure 1 125 c 20 v10v c20f 25 c 635 b 1 unity gain bandwidth v i = 10 mv, see figure 3 c l = 20 pf, 55 c 960 khz see figure 3 125 c 440 v10mv fb 25 c 43 f m phase margin v i = 10 m v , c l =20 p f f = b 1 , see figure 3 55 c 47 c l = 20 f , see figure 3 125 c 39
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 14 post office box 655303 ? dallas, texas 75265 parameter measurement information single-supply versus split-supply test circuits because the tlc27m2 and tlc27m7 are optimized for single-supply operation, circuit configurations used for the various tests often present some inconvenience since the input signal, in many cases, must be offset from ground. this inconvenience can be avoided by testing the device with split supplies and the output load tied to the negative rail. a comparison of single-supply versus split-supply test circuits is shown below. the use of either circuit gives the same result. + v dd c l r l v o v i v i v o r l c l + v dd + v dd (a) single supply (b) split supply figure 1. unity-gain amplifier 1/2 v dd v dd + v dd + + 20 w v o 2 k w 20 w v dd 20 w 20 w 2 k w v o (b) split supply (a) single supply figure 2. noise-test circuit v dd + 10 k w v o 100 w c l 1/2 v dd v i v i c l 100 w v o 10 k w + v dd + v dd (a) single supply (b) split supply figure 3. gain-of-100 inverting amplifier
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 15 post office box 655303 ? dallas, texas 75265 parameter measurement information input bias current because of the high input impedance of the tlc27m2 and tlc27m7 operational amplifiers, attempts to measure the input bias current can result in erroneous readings. the bias current at normal room ambient temperature is typically less than 1 pa, a value that is easily exceeded by leakages on the test socket. two suggestions are offered to avoid erroneous measurements: 1. isolate the device from other potential leakage sources. use a grounded shield around and between the device inputs (see figure 4). leakages that would otherwise flow to the inputs are shunted away. 2. compensate for the leakage of the test socket by actually performing an input bias current test (using a picoammeter) with no device in the test socket. the actual input bias current can then be calculated by subtracting the open-socket leakage readings from the readings obtained with a device in the test socket. one word of cautionemany automatic testers as well as some bench-top operational amplifier testers use the servo-loop technique with a resistor in series with the device input to measure the input bias current (the voltage drop across the series resistor is measured and the bias current is calculated). this method requires that a device be inserted into the test socket to obtain a correct reading; therefore, an open-socket reading is not feasible using this method. v = v ic 4 1 5 8 85 figure 4. isolation metal around device inputs (jg and p packages) low-level output voltage to obtain low-supply-voltage operation, some compromise was necessary in the input stage. this compromise results in the device low-level output being dependent on both the common-mode input voltage level as well as the differential input voltage level. when attempting to correlate low-level output readings with those quoted in the electrical specifications, these two conditions should be observed. if conditions other than these are to be used, please refer to figures 14 through 19 in the typical characteristics of this data sheet.
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 16 post office box 655303 ? dallas, texas 75265 parameter measurement information input offset voltage temperature coefficient erroneous readings often result from attempts to measure temperature coefficient of input offset voltage. this parameter is actually a calculation using input offset voltage measurements obtained at two different temperatures. when one (or both) of the temperatures is below freezing, moisture can collect on both the device and the test socket. this moisture results in leakage and contact resistance, which can cause erroneous input offset voltage readings. the isolation techniques previously mentioned have no effect on the leakage, since the moisture also covers the isolation metal itself, thereby rendering it useless. it is suggested that these measurements be performed at temperatures above freezing to minimize error. full-power response full-power response, the frequency above which the operational amplifier slew rate limits the output voltage swing, is often specified two ways: full-linear response and full-peak response. the full-linear response is generally measured by monitoring the distortion level of the output while increasing the frequency of a sinusoidal input signal until the maximum frequency is found above which the output contains significant distortion. the full-peak response is defined as the maximum output frequency, without regard to distortion, above which full peak-to-peak output swing cannot be maintained. because there is no industry-wide accepted value for significant distortion, the full-peak response is specified in this data sheet and is measured using the circuit of figure 1. the initial setup involves the use of a sinusoidal input to determine the maximum peak-to-peak output of the device (the amplitude of the sinusoidal wave is increased until clipping occurs). the sinusoidal wave is then replaced with a square wave of the same amplitude. the frequency is then increased until the maximum peak-to-peak output can no longer be maintained (figure 5). a square wave is used to allow a more accurate determination of the point at which the maximum peak-to-peak output is reached. (a) f = 1 khz (b) b om > f > 1 khz (c) f = b om (d) f > b om figure 5. full-power-response output signal test time inadequate test time is a frequent problem, especially when testing cmos devices in a high-volume, short-test-time environment. internal capacitances are inherently higher in cmos than in bipolar and bifet devices and require longer test times than their bipolar and bifet counterparts. the problem becomes more pronounced with reduced supply levels and lower temperatures.
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 17 post office box 655303 ? dallas, texas 75265 typical characteristics table of graphs figure v io input offset voltage distribution 6, 7 a vio temperature coefficient distribution 8, 9 vs high-level output current 10, 11 v oh high-level output voltage g vs supply voltage , 12 oh gg g vs free-air temperature 13 vs common-mode input volta g e 14 , 15 v ol low level out p ut voltage vs common mode in ut voltage vs differential input voltage 14, 15 16 v ol lo w- le v el o u tp u t v oltage g vs free-air temperature 17 vs low-level output current 18, 19 vs supply voltage 20 a vd differential voltage amplification yg vs free-air temperature 21 vd g vs frequency 32, 33 i ib /i io input bias and input offset current vs free-air temperature 22 v ic common-mode input voltage vs supply voltage 23 i dd su pp ly current vs supply voltage 24 i dd s u ppl y c u rrent yg vs free-air temperature 25 sr slew rate vs supply voltage 26 sr sle w rate yg vs free-air temperature 27 normalized slew rate vs free-air temperature 28 v o(pp) maximum peak-to-peak output voltage vs frequency 29 b 1 unity gain bandwidth vs free-air temperature 30 b 1 unit y- gain band w idth vs supply voltage 31 f vs supply voltage 34 f m phase margin yg vs free-air temperature 35 m g vs capacitive loads 36 v n equivalent input noise voltage vs frequency 37 f phase shift vs frequency 32, 33
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 18 post office box 655303 ? dallas, texas 75265 typical characteristics figure 6 5 percentage of units % v io input offset voltage mv 60 5 0 4 3 2 1 0 1 2 3 4 10 20 30 40 50 distribution of tlc27m2 input offset voltage ???????????? ???????????? 612 amplifiers tested from 4 wafer lots v dd = 5 v t a = 25 c p package figure 7 50 40 30 20 10 4 3 2 1 0 1 2 3 4 0 5 60 v io input offset voltage mv percentage of units % 5 distribution of tlc27m2 input offset voltage p package t a = 25 c ??????????? ??????????? 612 amplifiers tested from 4 wafer lots v dd = 10 v figure 8 10 percentage of units % a vio temperature coefficient m v/ c 60 10 0 8 6 4 2 0 2 4 6 8 10 20 30 40 50 distribution of tlc27m2 and tlc27m7 input offset voltage temperature coefficient outliers: (1) 33.0 m v/ c t a = 25 c to 125 c p package ???????????? 224 amplifiers tested from 6 wafer lots v dd = 5 v figure 9 50 40 30 20 10 8 6 4 2 0 2 4 6 8 0 10 60 a vio temperature coefficient m v/ c percentage of units % 10 distribution of tlc27m2 and tlc27m7 input offset voltage temperature coefficient outliers: (1) 34.6 m v/ c ???????????? ???????????? 224 amplifiers tested from 6 wafer lots v dd = 10 v t a = 25 c to 125 c p package
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 19 post office box 655303 ? dallas, texas 75265 typical characteristics 2 figure 10 0 0 voh high-level output voltage v i oh high-level output current ma 10 5 2 4 6 8 1 2 3 4 t a = 25 c v id = 100 mv v dd = 3 v high-level output voltage vs high-level output current v oh ???? ???? v dd = 5 v ???? ???? v dd = 4 v figure 11 0 0 i oh high-level output current ma 40 16 10 20 30 2 4 6 8 10 12 14 ?????? ?????? v dd = 16 v high-level output voltage vs high-level output current voh high-level output voltage v v oh v id = 100 mv t a = 25 c ???? ???? v dd = 10 v figure 12 0 v dd supply voltage v 16 2 4 6 8 10 12 14 14 12 10 8 6 4 2 16 0 high-level output voltage vs supply voltage voh high-level output voltage v v oh v id = 100 mv r l = 100 k w t a = 25 c figure 13 v dd 1.7 v dd 1.8 v dd 1.9 v dd 2 v dd 2.1 v dd 2.2 v dd 2.3 100 75 50 25 0 25 50 v dd 1.6 125 t a free-air temperature c v dd 2.4 75 i oh = 5 ma v id = 100 ma ???? v dd = 5 v ???? ???? v dd = 10 v high-level output voltage vs free-air temperature voh high-level output voltage v v oh 2 data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various dev ices.
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 20 post office box 655303 ? dallas, texas 75265 typical characteristics 2 figure 14 0 300 vol low-level output voltage mv v ic common-mode input voltage v 4 700 1 2 3 400 500 600 t a = 25 c i ol = 5 ma v dd = 5 v v id = 100 mv v id = 1 v low-level output voltage vs common-mode input voltage 650 550 450 350 v ol figure 15 250 0 v ic common-mode input voltage v 300 350 400 450 500 24 6810 v dd = 10 v i ol = 5 ma t a = 25 c v id = 1 v v id = 2.5 v v id = 100 mv low-level output voltage vs common-mode input voltage 13 57 7 vol low-level output voltage mv v ol figure 16 0 v id differential input voltage v 10 2 4 6 8 800 700 600 500 400 300 200 100 0 i ol = 5 ma v ic = | v id /2 | t a = 25 c v dd = 5 v low-level output voltage vs differential input voltage 1 3 5 7 9 vol low-level output voltage mv v ol v dd = 10 v figure 17 low-level output voltage vs free-air temperature 75 0 t a free-air temperature c 125 900 50 25 0 25 50 75 100 100 200 300 400 500 600 700 800 v ic = 0.5 v v id = 1 v i ol = 5 ma v dd = 5 v v dd = 10 v vol low-level output voltage mv v ol 2 data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various dev ices.
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 21 post office box 655303 ? dallas, texas 75265 typical characteristics 2 figure 18 0 vol low-level output voltage v i ol low-level output current ma 1 8 0 12 3 4 5 6 7 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 v dd = 3 v v dd = 5 v low-level output voltage vs low-level output current v ol v dd = 4 v v id = 1 v v ic = 0.5 v t a = 25 c figure 19 0 i ol low-level output current ma 3 30 0 5 10 15 20 25 0.5 1 1.5 2 2.5 t a = 25 c v ic = 0.5 v v id = 1 v ???? ???? v dd = 16 v ???? ???? v dd = 10 v low-level output voltage vs low-level output current vol low-level output voltage v v ol figure 20 0 500 16 0 2 4 6 8 10 12 14 50 100 150 200 250 300 350 400 450 r l = 100 k w t a = 55 c 40 c 0 c 25 c 70 c 85 c 125 c large-signal differential voltage amplification vs supply voltage v dd supply voltage v avd large-signal differential a vd voltage amplification v/mv figure 21 450 400 350 300 250 200 150 100 50 100 75 50 25 0 25 50 0 125 500 t a free-air temperature c 75 ???? ???? v dd = 10 v ???? ???? r l = 100 k w large-signal differential voltage amplification vs free-air temperature ???? ???? v dd = 5 v avd large-signal differential a vd voltage amplification v/mv 2 data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various dev ices.
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 22 post office box 655303 ? dallas, texas 75265 typical characteristics 2 figure 22 0.1 125 10000 45 65 85 105 1 10 100 1000 25 iib and iio input bias and offset currents pa t a free-air temperature c v dd = 10 v v ic = 5 v see note a input bias current and input offset current vs free-air temperature ?? ?? i io ?? ?? i ib ib i i io note a: the typical values of input bias current and input offset current below 5 pa were determined mathematically. figure 23 0 vic common-mode input voltage v v dd supply voltage v 16 16 0 24 6 8 10 12 14 2 4 6 8 10 12 14 t a = 25 c common-mode input voltage positive limit vs supply voltage v ic figure 24 300 idd supply current a v dd supply voltage v v o = v dd /2 no load t a = 55 c 0 c 25 c 70 c 125 c 0 800 16 0 2 4 6 8 10 12 14 100 200 400 500 600 700 40 c supply current vs supply voltage dd i a m figure 25 no load v o = v dd /2 75 t a free-air temperature c 500 125 0 50 25 0 25 50 75 100 50 100 150 200 250 300 350 400 450 supply current vs free-air temperature idd supply current a dd i a m ???? ???? v dd = 10 v ????? ????? v dd = 5 v 2 data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various dev ices.
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 23 post office box 655303 ? dallas, texas 75265 typical characteristics 2 figure 26 0 v dd supply voltage v 0.9 16 0.3 24 6 8 10 12 14 0.4 0.5 0.6 0.7 0.8 c l = 20 pf r l = 100 k w v ipp = 1 v a v = 1 ????? see figure 1 t a = 25 c slew rate vs supply voltage s m sr slew rate v/ figure 27 75 t a free-air temperature c 0.9 125 0.2 50 25 0 25 50 75 100 0.3 0.4 0.5 0.6 0.7 0.8 r l = 100 k w a v = 1 see figure 1 c l = 20 pf slew rate vs free-air temperature s m sr slew rate v/ v i(pp) = 5.5 v v dd = 10 v ????? ????? v dd = 10 v v i(pp) = 1 v v dd = 5 v v i(pp) = 1 v v dd = 5 v v i(pp) = 2.5 v figure 28 75 normalized slew rate t a free-air temperature c 1.4 125 0.5 50 25 0 25 50 75 100 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 a v = 1 v i(pp) = 1 v r l = 100 k w c l = 20 pf v dd = 10 v v dd = 5 v normalized slew rate vs free-air temperature figure 29 1 f frequency khz 10 1000 0 1 2 3 4 5 6 7 8 9 10 100 t a = 55 c t a = 25 c t a = 125 c ????? ????? see figure 1 maximum peak-to-peak output voltage vs frequency r l = 100 k w ???? ???? v dd = 5 v ???? ???? v dd = 10 v maximum peak-to-peak output voltage v v o(pp) 2 data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various dev ices.
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 24 post office box 655303 ? dallas, texas 75265 typical characteristics 2 figure 30 75 b1 unity-gain bandwidth khz t a free-air temperature c 900 125 300 50 25 0 25 50 75 100 400 500 600 700 800 unity-gain bandwidth vs free-air temperature b 1 v dd = 5 v v i = 10 mv c l = 20 pf see figure 3 figure 31 0 v dd supply voltage v 800 16 400 2 4 6 8 10 12 14 450 500 550 600 650 700 750 unity-gain bandwidth vs supply voltage b1 unity-gain bandwidth khz b 1 see figure 3 t a = 25 c c l = 20 pf v i = 10 mv large-scale differential voltage amplification and phase shift vs frequency 0 f frequency hz 1 m 0.1 10 100 1 k 10 k 100 k 1 10 10 2 10 3 10 4 10 5 10 6 150 120 90 60 30 0 180 phase shift t a = 25 c r l = 100 k w v dd = 5 v phase shift 10 7 ??? ??? a vd avd large-signal differential a vd voltage amplification figure 32 2 data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various dev ices.
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 25 post office box 655303 ? dallas, texas 75265 typical characteristics 2 100 k 10 k 1 k 100 10 1 m 0 phase shift v dd = 10 v r l = 100 k w t a = 25 c phase shift 180 0 30 60 90 120 150 10 6 10 5 10 4 10 3 10 2 10 1 0.1 f frequency hz 10 7 large-scale differential voltage amplification and phase shift vs frequency ??? ??? a vd avd large-signal differential a vd voltage amplification figure 33 figure 34 0 38 m phase margin v dd supply voltage v 16 50 2 4 6 8 10 12 14 40 42 44 46 48 see figure 3 t a = 25 c c l = 20 pf v i = 10 mv phase margin vs supply voltage m f figure 35 75 35 t a free-air temperature c 125 45 50 25 0 25 50 75 100 37 39 41 43 v dd = 5 v v i = 10 mv c l = 20 pf see figure 3 phase margin vs free-air temperature m phase margin m f 2 data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various dev ices.
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 26 post office box 655303 ? dallas, texas 75265 typical characteristics figure 36 0 28 c l capacitive load pf 100 44 20 40 60 80 30 32 34 36 38 40 42 v dd = 5 v v i = 10 mv t a = 25 c see figure 3 phase margin vs capacitive load 90 70 50 30 10 m phase margin m f figure 37 1 0 vn equivalent input noise voltage nv/hz f frequency hz 1000 300 50 100 150 200 250 10 100 see figure 2 t a = 25 c r s = 20 w v dd = 5 v equivalent input noise voltage vs frequency v n nv/ hz
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 27 post office box 655303 ? dallas, texas 75265 application information single-supply operation while the tlc27m2 and tlc27m7 perform well using dual power supplies (also called balanced or split supplies), the design is optimized for single-supply operation. this design includes an input common-mode voltage range that encompasses ground as well as an output voltage range that pulls down to ground. the supply voltage range extends down to 3 v (c-suffix types), thus allowing operation with supply levels commonly available for ttl and hcmos; however, for maximum dynamic range, 16-v single-supply operation is recommended. many single-supply applications require that a voltage be applied to one input to establish a reference level that is above ground. a resistive voltage divider is usually sufficient to establish this reference level (see figure 38). the low input bias current of the tlc27m2 and tlc27m7 permits the use of very large resistive values to implement the voltage divider, thus minimizing power consumption. the tlc27m2 and tlc27m7 work well in conjunction with digital logic; however, when powering both linear devices and digital logic from the same power supply, the following precautions are recommended: 1. power the linear devices from separate bypassed supply lines (see figure 39); otherwise, the linear device supply rails can fluctuate due to voltage drops caused by high switching currents in the digital logic. 2. use proper bypass techniques to reduce the probability of noise-induced errors. single capacitive decoupling is often adequate; however, high-frequency applications may require rc decoupling. r4 v o v dd r2 r1 v i v ref r3 c 0.01 m f + v ref  v dd r3 r1  r3 v o   v ref v i  r4 r2  v ref figure 38. inverting amplifier with voltage reference + + (a) common supply rails logic power supply logic logic logic logic logic (b) separate bypassed supply rails (preferred) power supply output output figure 39. common versus separate supply rails
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 28 post office box 655303 ? dallas, texas 75265 application information input characteristics the tlc27m2 and tlc27m7 are specified with a minimum and a maximum input voltage that, if exceeded at either input, could cause the device to malfunction. exceeding this specified range is a common problem, especially in single-supply operation. note that the lower range limit includes the negative rail, while the upper range limit is specified at v dd 1 v at t a = 25 c and at v dd 1.5 v at all other temperatures. the use of the polysilicon-gate process and the careful input circuit design gives the tlc27m2 and tlc27m7 very good input offset voltage drift characteristics relative to conventional metal-gate processes. offset voltage drift in cmos devices is highly influenced by threshold voltage shifts caused by polarization of the phosphorus dopant implanted in the oxide. placing the phosphorus dopant in a conductor (such as a polysilicon gate) alleviates the polarization problem, thus reducing threshold voltage shifts by more than an order of magnitude. the offset voltage drift with time has been calculated to be typically 0.1 m v/month, including the first month of operation. because of the extremely high input impedance and resulting low bias current requirements, the tlc27m2 and tlc27m7 are well suited for low-level signal processing; however, leakage currents on printed-circuit boards and sockets can easily exceed bias current requirements and cause a degradation in device performance. it is good practice to include guard rings around inputs (similar to those of figure 4 in the parameter measurement information section). these guards should be driven from a low-impedance source at the same voltage level as the common-mode input (see figure 40). the inputs of any unused amplifiers should be tied to ground to avoid possible oscillation. noise performance the noise specifications in operational amplifier circuits are greatly dependent on the current in the first-stage differential amplifier. the low input bias current requirements of the tlc27m2 and tlc27m7 result in a very low noise current, which is insignificant in most applications. this feature makes the devices especially favorable over bipolar devices when using values of circuit impedance greater than 50 k w , since bipolar devices exhibit greater noise currents. v i (a) noninverting amplifier (c) unity-gain amplifier + (b) inverting amplifier v i + + v i v o v o v o figure 40. guard-ring schemes output characteristics the output stage of the tlc27m2 and tlc27m7 is designed to sink and source relatively high amounts of current (see typical characteristics). if the output is subjected to a short-circuit condition, this high current capability can cause device damage under certain conditions. output current capability increases with supply voltage. all operating characteristics of the tlc27m2 and tlc27m7 were measured using a 20-pf load. the devices drive higher capacitive loads; however, as output load capacitance increases, the resulting response pole occurs at lower frequencies, thereby causing ringing, peaking, or even oscillation (see figure 41). in many cases, adding a small amount of resistance in series with the load capacitance alleviates the problem.
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 29 post office box 655303 ? dallas, texas 75265 application information + 2.5 v v o c l 2.5 v v i (a) c l = 20 pf, r l = no load (b) c l = 170 pf, r l = no load (c) c l = 190 pf, r l = no load (d) test circuit t a = 25 c f = 1 khz v i(pp) = 1 v figure 41. effect of capacitive loads and test circuit output characteristics (continued) although the tlc27m2 and tlc27m7 possess excellent high-level output voltage and current capability, methods for boosting this capability are available, if needed. the simplest method involves the use of a pullup resistor (r p ) connected from the output to the positive supply rail (see figure 42). there are two disadvantages to the use of this circuit. first, the nmos pulldown transistor n4 (see equivalent schematic) must sink a comparatively large amount of current. in this circuit, n4 behaves like a linear resistor with an on-resistance between approximately 60 w and 180 w , depending on how hard the op amp input is driven. with very low values of r p , a voltage offset from 0 v at the output occurs. second, pullup resistor r p acts as a drain load to n4 and the gain of the operational amplifier is reduced at output voltage levels where n5 is not supplying the output current.
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 30 post office box 655303 ? dallas, texas 75265 application information output characteristics (continued) figure 42. resistive pullup to increase v oh + v i v dd r p v o r2 r1 r l i p i p i l r p  v dd  v o i f  i l  i p i p = pullup current required by the operational amplifier (typically 500 m a) v o + c figure 43. compensation for input capacitance feedback operational amplifier circuits nearly always employ feedback, and since feedback is the first prerequisite for oscillation, some caution is appropriate. most oscillation problems result from driving capacitive loads (discussed previously) and ignoring stray input capacitance. a small-value capacitor connected in parallel with the feedback resistor is an effective remedy (see figure 43). the value of this capacitor is optimized empirically. electrostatic-discharge protection the tlc27m2 and tlc27m7 incorporate an internal electrostatic-discharge (esd) protection circuit that prevents functional failures at voltages up to 2000 v as tested under mil-std-883c, method 3015.2. care should be exercised, however, when handling these devices as exposure to esd may result in the degradation of the device parametric performance. the protection circuit also causes the input bias currents to be temperature dependent and have the characteristics of a reverse-biased diode. latch-up because cmos devices are susceptible to latch-up due to their inherent parasitic thyristors, the tlc27m2 and tlc27m7 inputs and outputs were designed to withstand 100-ma surge currents without sustaining latch-up; however, techniques should be used to reduce the chance of latch-up whenever possible. internal protection diodes should not, by design, be forward biased. applied input and output voltage should not exceed the supply voltage by more than 300 mv. care should be exercised when using capacitive coupling on pulse generators. supply transients should be shunted by the use of decoupling capacitors (0.1 m f typical) located across the supply rails as close to the device as possible. the current path established if latch-up occurs is usually between the positive supply rail and ground and can be triggered by surges on the supply lines and/or voltages on either the output or inputs that exceed the supply voltage. once latch-up occurs, the current flow is limited only by the impedance of the power supply and the forward resistance of the parasitic thyristor and usually results in the destruction of the device. the chance of latch-up occurring increases with increasing temperature and supply voltages.
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 31 post office box 655303 ? dallas, texas 75265 application information + r2 68 k w 2.2 nf c2 v o 1n4148 470 k w 100 k w c1 2.2 nf 68 k w r1 47 k w 100 k w 1 m f 100 k w 5 v 1/2 tlc27m2 notes: v o(pp) 2 v f o  1 2  r1r2c1c2  figure 44. wien oscillator v i r 5 v i s 2n3821 + 1/2 tlc27m7 notes: v i = 0 v to 3 v i s  v i r figure 45. precision low-current sink
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 32 post office box 655303 ? dallas, texas 75265 application information (see note a) + 100 k w + 100 k w 100 k w gain control 1 m w 1 k w 10 k w 5 v 1 m f + + 0.1 m f 1/2 tlc27m2 0.1 m f note a: low to medium impedance dynamic mike figure 46. microphone preamplifier + 10 m w v o v ref 150 pf 100 k w 15 nf v dd + 1 k w 1/2 tlc27m2 tlc27m2 1/2 notes: v dd = 4 v to 15 v v ref = 0 v to v dd 2 v figure 47. photo-diode amplifier with ambient light rejection
tlc27m2, tlc27m2a, tlc27m2b, tlc27m7 lincmos ? precision dual operational amplifiers slos051c october 1987 revised may 1999 33 post office box 655303 ? dallas, texas 75265 application information + v dd v o 1/2 tlc27m2 1 m w 33 pf 100 k w 1n4148 100 k w notes: v dd = 8 v to 16 v v o = 5 v, 10 ma figure 48. 5-v low-power voltage regulator + 10 k w tlc27m2 1/2 v o 100 k w 100 k w 0.1 m f 1 m w 0.22 m f 1 m w v i 0.1 m f 5 v figure 49. single-rail ac amplifiers
important notice texas instruments and its subsidiaries (ti) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. all products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. ti warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with ti's standard warranty. testing and other quality control techniques are utilized to the extent ti deems necessary to support this warranty. specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. certain applications using semiconductor products may involve potential risks of death, personal injury, or severe property or environmental damage (acritical applicationso). ti semiconductor products are not designed, authorized, or warranted to be suitable for use in life-support devices or systems or other critical applications. inclusion of ti products in such applications is understood to be fully at the customer's risk. in order to minimize risks associated with the customer's applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. ti assumes no liability for applications assistance or customer product design. ti does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of ti covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. ti's publication of information regarding any third party's products or services does not constitute ti's approval, warranty or endorsement thereof. copyright ? 1999, texas instruments incorporated


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